We have developed our own plasma CVD applying the plasma process of our core technology.
Explanation of plasma CVD
The thin film filter forming method of using condensate from an evaporated target can be divided largely into Physical vapor deposition (PVD) and Chemical vapor deposition (CVD). PVD is a TFF forming method, which condenses the vaporized atoms and molecules, which were created by thermal evaporation or ion impulse sputtering on to a substrate. Evaporation, Ion plating, IBS is one of the types of PVD.
On the other hand, CVD is a method to create TFF by solution of vaporized coating material and/or chemical reaction of each molecule at the surface of substrate. Plasma CVD is an example of CVD. Creating TFF by causing plasma in a material gas exciting it into active radicals and/or chemically active ions is generally called plasma CVD.
Plasma excited gas can undergo very fast reaction under non-equilibrium conditions. It is thus possible to produce a TFF, which has atomic structure and/or composition, which cannot be realized by the thermal excited process.
Example of use
OCJ produces DLC, which has high durability and high transmittance over IR region by applying our original Ion process method on plasma generation.